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簡要描述:二硫化钽晶體(tǐ)(1T) TaS2(Tantalum Sulfide) -1T
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:半導體(tǐ),電(diàn)荷密度波(CDW),Mott相
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
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二硫化钽晶體(tǐ)(1T) TaS2(Tantalum Sulfide) -1T
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:半導體(tǐ),電(diàn)荷密度波(CDW),Mott相
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5
Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).
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