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簡要描述:二硫化钽晶體(tǐ)(2H) TaS2(Tantalum Sulfide) -2H
晶體(tǐ)尺寸:~10毫米
電(diàn)學性能:Metal, Charge density waves (CDW) system below ~75K, Superconductor with Tc ~1K
金屬、電(diàn)荷密度波(CDW)
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.331 nm,
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二硫化钽晶體(tǐ)(2H) TaS2(Tantalum Sulfide) -2H
晶體(tǐ)尺寸:~10毫米
電(diàn)學性能:Metal, Charge density waves (CDW) system below ~75K, Superconductor with Tc ~1K
金屬、電(diàn)荷密度波(CDW)
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.331 nm, c = 1.207 nm, α = β = 90, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
X-ray diffraction on a 2H phase Tantalum Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal 2H-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 2H-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H-TaS2. Measurement was performed with a 785 nm Raman system at room temperature.
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