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In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.
More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoSe2 crystals.
Unlike other sources, our GaSe crystals are best suited towards electronic and optical applications in 2D materials field.
Our single crystal GeSe （Germanium selenide） crystals come with guaranteed optical, electronic, and structural anisotropy.
In2Se3 single crystals were grown using Physical vapor transport （PVT） as well as Bridgman technique.
Our MoSe2 crystals are grown using two different techniques through chemical vapor transport （CVT） or flux zone growth （see description of these two methods below）.
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