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  • 2D Semiconductorg-C3N4 crystals 氮化碳晶體(tǐ)

    Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure.

    訪問次數:1208
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
  • 2D SemiconductorMnO2 二氧化錳晶體(tǐ)

    MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form .

    訪問次數:706
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
  • 2D SemiconductorMoO3 三氧化钼晶體(tǐ)

    a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below). In its layered form,

    訪問次數:1323
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
  • 2D SemiconductorGeP 磷化鍺晶體(tǐ)

    GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.

    訪問次數:1267
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
  • 2D SemiconductorGeAs 砷化鍺晶體(tǐ)

    Our single crystal GeAs (Germanium arsenide) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality.

    訪問次數:1386
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
  • 2D SemiconductorSbSI 矽化銻晶體(tǐ)

    Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21.

    訪問次數:738
    産品價格:面議
    廠商(shāng)性質:生(shēng)産廠家
    更新日期:2018-07-16
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上海逅飛科技有限公司 公司地址:上海市虹口區寶山路778号海倫國際大(dà)廈5樓   技術支持:化工(gōng)儀器網
  • 聯系人:袁文軍
  • QQ:494474517
  • 公司座機:86-021-56830191
  • 郵箱:yuanwenjun@sunano.com.cn

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