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InTe 碲化铟晶體(tǐ) (Indium Telluride)

簡要描述:The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence.

  • 産品型号:
  • 廠商(shāng)性質:生(shēng)産廠家
  • 更新時間:2018-07-11
  • 訪  問  量:689

詳細介紹

The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. InTe crystals exhibit TlSe-like structural transformation and thus has 2D anisotropic response much similar to ReS2, WTe2, and TiS3. Each monolayer is four atoms thick (Te-In-In-Te) that is roughly 0.9-1.0 nm. In our facilities, we have isolated InTe down to monolayer. In the literature, monolayer InTe is currently under-studied, yet to be discovered. Raman peaks are sharp and strong indicating high crystallinity.
 
Our crystals are grown by state-of-the-art growth techniques after 5 weeks and show high crystallinity. The size of the samples is typically around ~4mm in size. InTe has a layered structure with weak interlayer coupling. Single crystal InTe comes ready for exfoliation and is ideal for 2D research.
Properties of InTe layered crystals - 2Dsemiconductors USA

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上海逅飛科技有限公司 公司地址:上海市虹口區寶山路778号海倫國際大(dà)廈5樓   技術支持:化工(gōng)儀器網
  • 聯系人:袁文軍
  • QQ:494474517
  • 公司座機:86-021-56830191
  • 郵箱:yuanwenjun@sunano.com.cn

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