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簡要描述:三硒化锆晶體(tǐ)(99.995%) ZrSe3 (Zirconium Triselenide)
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:單斜晶系
晶胞參數:a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90°, γ = 97.50°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
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三硒化锆晶體(tǐ)(99.995%) ZrSe3 (Zirconium Triselenide)
晶體(tǐ)尺寸:~8毫米
電(diàn)學性能:半導體(tǐ)
晶體(tǐ)結構:單斜晶系
晶胞參數:a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90°, γ = 97.50°
晶體(tǐ)類型:合成
晶體(tǐ)純度:>99.995%
X-ray diffraction on a ZrSe3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 3, 4, 5, 6, 7, 8
Powder X-ray diffraction (XRD) of a single crystal ZrSe3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Raman spectrum of a single crystal ZrSe3. Measurement was performed with a 785 nm Raman system at room temperature.
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