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二硒化钼晶體(tǐ) 2H-MoSe2(Molybdenum Diselenide)-N型
晶體(tǐ)尺寸:~10毫米
電(diàn)學特性:N型半導體(tǐ)
晶體(tǐ)結構:六邊形
晶胞參數:a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120°
晶體(tǐ)類型:合成
晶體(tǐ)純度:99.995%
X-ray diffraction on a MoSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal MoSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoSe2. Measurement was performed with a 785 nm Raman system at room temperature.
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