GaS 硫化镓晶體(tǐ) （Gallium Sulfide）

簡要描述：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

産品型号：
廠商(shāng)性質：生(shēng)産廠家
更新時間：2018-07-06
訪問量：649

産品咨詢聯系我(wǒ)們

産品分(fēn)類

二維材料

其他二維材料二維材料粉末二維材料溶液碲化物(wù)晶體(tǐ) 硒化物(wù)晶體(tǐ) 硫化物(wù)晶體(tǐ) 絕緣體(tǐ) 鈣钛礦異質結 MOFS材料二維材料薄膜黑磷六方氮化硼查看全部産品

詳細介紹

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Bridgman and flux zone methods both offer similar grade qualities. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of monoclinic GaS vdW crystals